View STI33N65M2_8880287.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

this is information on a product in full production. december 2014 docid027286 rev 1 1/23 stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 n-channel 650 v, 0.117 ? typ., 24 a mdmesh? m2 power mosfets in d2pak, to-220fp, to-220 and i2pak packages datasheet - production data figure 1. internal schematic diagram features ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using mdmesh? m2 technology. thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. 7$% 7$% 7$% ' 3$. 7$% 72 , 3$. 72)3 am15572v1 , tab order codes v ds r ds(on) max i d stb33n65m2 650 v 0.14 ? 24 a stf33n65m2 stp33n65m2 STI33N65M2 table 1. device summary order codes marking package packaging stb33n65m2 33n65m2 d2pak tape and reel stf33n65m2 to-220fp tube stp33n65m2 to-220 STI33N65M2 i2pak www.st.com
contents stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 2/23 docid027286 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 d 2 pak, stb33n65m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 to-220fp, stf33n65m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 to-220, stp33n65m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.4 i 2 pak, STI33N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
docid027286 rev 1 3/23 stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 electrical ratings 23 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d 2 pak, to-220, i 2 pak to-220fp v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 24 24 (1) 1. current limited by package. a i d drain current (continuous) at t c = 100 c 15 15 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 96 a p tot total dissipation at t c = 25 c 190 34 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s; t c =25 c) 2500 v dv/dt (3) 3. i sd 24 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v peak diode recovery voltage slope 15 v/ns dv/dt (4) 4. v ds 520 v mosfet dv/dt ruggedness 50 t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 table 3. thermal data symbol parameter value unit d 2 pak to-220fp to-220 i 2 pak r thj-case thermal resistance junction-case max 0.66 3.68 0.66 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board thermal resistance junction-pcb max 30 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 2.5 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50 v) 780 mj
electrical characteristics stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 4/23 docid027286 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 650 v i dss zero gate voltage drain current v gs = 0, v ds = 650 v 1 a v gs = 0, v ds = 650 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 12 a 0.117 0.14 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 1790 - pf c oss output capacitance - 75 - pf c rss reverse transfer capacitance -2-pf c oss eq (1) 1. coss eq. is defined as a constant equivalent capacitance giving the same charging time as coss when vds increases from 0 to 80% vdss equivalent output capacitance v gs = 0 v, v ds = 0 to 520 v - 380 - pf r g intrinsic gate resistance f = 1 mhz open drain - 5 - ? q g total gate charge v dd = 520 v, i d = 24 a, v gs = 10 v (see figure 17 ) - 41.5 - nc q gs gate-source charge - 6.8 - nc q gd gate-drain charge - 18 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 325 v, i d = 12 a, r g = 4.7 , v gs = 10 v (see figure 16 and figure 21 ) -13.5-ns t r rise time - 11.5 - ns t d(off) turn-off delay time - 72.5 - ns t f fall time - 9 - ns
docid027286 rev 1 5/23 stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 electrical characteristics 23 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 24 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 96 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage v gs = 0 v, i sd = 24 a - 1.6 v t rr reverse recovery time i sd = 24 a, di/dt = 100 a/s v dd = 60 v (see figure 18 ) - 426 ns q rr reverse recovery charge - 7 c i rrm reverse recovery current - 33.5 a t rr reverse recovery time i sd = 24 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 18 ) - 544 ns q rr reverse recovery charge - 10 c i rrm reverse recovery current - 36.5 a
electrical characteristics stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 6/23 docid027286 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220, d 2 pak and i 2 pak figure 3. thermal impedance for to-220, d 2 pak and i 2 pak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp $0y , ' 9 '6 9 $ ?v pv ?v pv 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq 7m ?& 7f ?& 6lqjohsxovh w s = wk n5 wkm& / w s . w s v / / / / / / 6,1*/(38/6( &* $0y , ' 9 '6 9 $ ?v pv ?v pv 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq 7m ?& 7f ?& 6lqjohsxovh &* w s = wk n5 wkm& / w s . w s v / / / / / / 6,1*/(38/6( = wk n5 wkm& / w s w s figure 6. output characteristics figure 7. transfer characteristics 9 '6 9 , ' $ 9 9 9 9 *6 9 $0y , ' 9 *6 9 9 '6 9 $ $0y
docid027286 rev 1 7/23 stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 electrical characteristics 23 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance 4jq& 9 *6 9 9 '6 9 9 '6 9 '' 9 , ' $ $0y 5 '6rq 9 *6 9 , ' $ $0y figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature & 9 '6 9 s) & lvv & rvv & uvv $0y 9 '6 9 ( 266 ?- $0y 9 *6wk 7 - ?& qrup , ' ?$ $0y 7 - ?& 5 '6rq qrup , ' $ $0y
electrical characteristics stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 8/23 docid027286 rev 1 figure 14. source-drain diode forward characteristics figure 15. normalized v (br)dss vs temperature , 6' $ 7 - ?& 7 - ?& 7 - ?& 9 6' 9 $0y 7 - ?& 9 %5'66 qrup , ' p$ $0y
docid027286 rev 1 9/23 stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 test circuits 23 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd $0y 9 '' n n n n n 9 9 l 9 9 *0$; p) 3: , * &2167 q) '87 9 * am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' $0y 9 '6 w rq 9 *6 w grq w u w rii w grii w i
package mechanical data stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 10/23 docid027286 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 d 2 pak, stb33n65m2 figure 22. d2pak (to-263) drawing b9
docid027286 rev 1 11/23 stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 package mechanical data 23 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 7.75 8.00 d2 1.10 1.30 1.50 e 10 10.40 e1 8.50 8.70 8.90 e2 6.85 7.05 7.25 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 12/23 docid027286 rev 1 figure 23. d2pak footprint (dimensions in mm) )rrwsulqw
docid027286 rev 1 13/23 stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 package mechanical data 23 4.2 to-220fp, stf33n65m2 figure 24. to-220fp drawing 7012510_rev_k_b
package mechanical data stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 14/23 docid027286 rev 1 table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 ?3 3.2
docid027286 rev 1 15/23 stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 package mechanical data 23 4.3 to-220, stp33n65m2 figure 25. to-220 type a drawing bw\sh$b5hyb7
package mechanical data stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 16/23 docid027286 rev 1 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid027286 rev 1 17/23 stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 package mechanical data 23 4.4 i 2 pak, STI33N65M2 figure 26. i2pak (to-262) drawing 0004982_rev_h
package mechanical data stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 18/23 docid027286 rev 1 table 12. i2pak (to-262) mechanical data dim. mm. min. typ max. a 4.40 4.60 a1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 d 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 e10 10.40 l13 14 l1 3.50 3.93 l2 1.27 1.40
docid027286 rev 1 19/23 stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 packaging mechanical data 23 5 packaging mechanical data figure 27. tape for d2pak (to-263) p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
packaging mechanical data stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 20/23 docid027286 rev 1 figure 28. reel for d2pak (to-263) p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
docid027286 rev 1 21/23 stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 packaging mechanical data 23 table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t0.25 0.35 w23.7 24.3
revision history stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 22/23 docid027286 rev 1 6 revision history table 14. document revision history date revision changes 10-dec-2014 1 first release.
docid027286 rev 1 23/23 stb33n65m2, stf33n65m2, stp33n65m2, STI33N65M2 23 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

▲Up To Search▲

Price & Availability of STI33N65M2

	To Download STI33N65M2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .